Paper
2025年度
(1) T. Urakabe, K. Ishii, M. Hagiwara, Y. Higaki, Y. Itogawa,
"Effect of Capacitor between Drain and Gate Terminals
on Gate Magnetic Coupling Drive for Series-connected
Power Semiconductor Devices", IEEJ Journal Industry Appl.,
Vol.145, No.4, pp.287-297, 2025
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2024年度
(1) T. Urakabe, T. Kanda, M. Hagiwara, Y. Higaki, Y. Itogawa,
"A Method for Suppressing Gate Voltage Oscillations
in Magnetically Coupled Gate Drives for Series-connected
Power Semiconductor Devices", IEEJ Journal Industry Appl.,
Vol.145, No.3, pp.173-181, 2025
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2023年度
(1) J. Nakashima, T. Horiguchi, Y. Mukunoki, M. Hagiwara, T. Urakabe,
S. Harada
"Automated Flexible Modeling for Various Full-SiC Power Modules",
IEEE Transactions on Power Electronics, Vol.38, Issue 5, pp.6094-6107,
May 2023
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2022年度
(1) J.Nakashima, T.Horiguchi, Y.Mukunoki, K.Hatori, R.Tsuda,
H.Uemura, M.Hagiwara, T.Urakabe
"Investigation of Full SiC Power Modules for More Electric Aircraft
with Focus on FIT Rate and High Frequency Switching",
IEEE Trans. Industry Applications, Vol.58, Issue 3, pp.2978-2986,
May/June 2022
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2017年度
(1) 椋木、堀口、中山、葛本、赤木 「デバイスモデルによる
SiC-MOSFET過渡特性の高精度シミュレーション」、
三菱電機技報, Vol.91, No.7, pp.27-30, 2017
(2) Y.Mukunoki, Y.Nakamura, K.Konno, T.Horiguchi,
Y.Nakayama, A.Nishizawa, M.Kuzumoto and H.Agkagi
"Modelling of a Silicon-Carbide MOSFET With Focus on
Internal Stray Capacitances and Inductances, and its
Verification", IEEE Trans. Industry Applications.
Vol.54, Issue 3, pp.2588-2597, MAY/JUNE 2018
(3) Y.Mukunoki, K.Konno,T.Matsuo,T.Horiguchi, A.Nishizawa,
M.Kuzumoto, M.Hagiwara and H.Agkagi
"An Improved Compact Model for a Silicon-Carbide MOSFET
and its Application to Accurate Circuit Simulation",
IEEE Trans. Power Electronics.
Vol.33, Issue 11, pp.9834-9842, NOVEMBER 2018
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2016年度
(1) Y.Mukunoki, Y.Nakamura, T.Horiguchi, S.Kinouchi,
Y.Nakayama, T.Terashima, M.Kuzumoto and H.Agkagi
"Characterization and modeling of 1.2kV 30-A SiC
MOSFET", IEEE Trans. Electron Devices. Vol. 63,
Issue 11, pp. 4339-4345, 2016
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2015年度
(1) T. Horiguchi, S. Kinouchi, Y. Nakayama, T. Oi,
H.Urushibata, S. Okamoto, S. Tominaga, and H. Akagi,
"A High-Speed Protection Circuit for IGBTs Subjected
to Hard-Switching Faults", IEEE Trans. Ind. Appl.
vol.51 no.2, Mar./Apr. 2015
(2) T. Horiguchi, S. Kinouchi, Y. Nakayama, T. Oi,
H. Urushibata, S. Okamoto, S. Tominaga, and H.
Akagi,
"A Short Circuit Protection Method Based on a Gate
Charge Characteristic", IEEJ Journal Industry Appl. ,
Vol. 4, No. 4, pp. 360-369,2015
(3) 太田、稲永、谷村、田畑、葛本 「高圧力オゾン発生器と
濃縮による超高純度高濃度オゾン発生」、
電気学会論文誌A, Vol.135, No.10, pp.598-604, 2015
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2014年度
(1) 堀口、塚本、冨永、西村、藤田、赤木、木ノ内、大井、小山
「物理モデルに基づく並列接続IGBTのPWM連続動作時に
おける接合温度解析」、
電気学会論文誌D, Vol.134, No.5, pp486-495, 2014
(2) T. Horiguchi, T. Sugimoto, S. Tominaga, H. Urushibata,
H. Fujita, H. Akagi, S. Kinouchi, and T. Oi,
"Reverse-Recovery Analysis of Parallel-Connected pin
Diodes Using a Physics-Based Device Model",
Electronics and Communications in Japan, vol. 97,
no. 4, pp.80-89, April 2014
(3) 岡本、堀口、冨永、西村、藤田、赤木、木ノ内、大井
「IGBT物理モデルの負荷短絡保護回路への適用」、
電気学会論文誌D, Vol.134, No.10, 2014
(4) K. Sano, H. Kurita, T. Nakajima, M. Shimizu, M.
Kuzumoto, H. Yasuda, K.Takashima and A. Mizuno,
"Evaluation of Reactive Oxygen Species in Non-thermal
Plasma-treated Water", International Journal of Plasma
Environmental Science & Technology, Vol.8, No.2,
2014
(5) C. Gay, T. Nakajima, G. Prieto, M. Kuzumoto, K.
Takashima, and A.Mizuno,
"Super Heated Steam-DBD Plasma Synergy for
Cooking Ovens" , International Journal of Plasma
Environmental Science & Technology, Vol.8, No.2,
2014
(6) K. Yamasaki, H. Hayashi, M. Kuzumoto, H. Kurita,
K. Takashima, andA.Mizuno,
"Ammonia Generation Using Electric Discharge Plasma
Generated in Steam", International Journal of Plasma
Environmental Science & Technology,Vol.8, No.2, 2014
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2012年度
(1) 堀口，杉本，冨永，漆畑，藤田，赤木，木ノ内，大井：
「物理モデルに基づく並列接続pinダイオードのリカバリー特
性解析」，電気学会論文誌D, vol. 132, no. 5, pp. 566-573,
2012年5月
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2011年度
(1) 遠山，冨永，漆畑，藤田，赤木，木ノ内，大井：
「静特性と動特性の統合評価に基づくパラメータ抽出方法
-pinダイオードモデルへの応用」，電気学会論文誌D,
vol. 131, no. 7, pp. 864-872, 2011年7月
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2010年度
(1) G.Oinuma, Y.Inanaga, Y.Tanimura, M.Kuzumoto,
Y.Tabata and K.Watanabe,
"A comparative study of the surface recombination of
nitrogen atoms on various materials at atmospheric
pressure" J.Phys.D: Appl.Phys.43, 255-202, No.25, 2010
